(5) TSMC 0.35um SiGe BiCMOS Proceess:
This SiGe BiCMOS Process provides the manufacture of 3 poly layers and 3 metal layers. And, it has 3 kinds of NPN bipolar devices with a unit gain frequency (Ft) of 62/40/25 GHz (HS/ST/HV) and a unit power gain frequency (Fmax) of 70/60/40 GHz at different break down BVceo voltages (>2/3/5V). Two kinds of poly resistors (Hi/Lo) and Metal-Insulator-Metal capacitors are supported. A deep trench isolation provides superior noise immunity in bipolar devices, a critical consideration
in RF designs.
(6) GCT InGaP/GaAs 2um HBT Process:
GaAs HBT is a profitable process for the RF/MW circuits especially for the high power and low phase noise applications. At the same time, it can be used to implement optoelectronics circuit. The HBT power process is based on mesa-type HBT technology with high ft up to 35 GHz. In the library, the power devices possess high current gain (>100) and high breakdown voltage (>10V). Compared with the traditional AlGaAs/GaAs hetero-structure, the InGaP/GaAs HBT has better performance in
the reliability and the thermal stability. The digital, analog, and RF circuits are possible to be integrated together in the HBT process. And only single bias is needed.
(7) WIN 0.15 um PHEMT Process:
WIN is a world leader in GaAs using advanced 6-inch low noise and power pHEMT technology for high speed and high performance MMIC and RFICs. The 0.15um low noise pHEMTs are suitable in broadband communications and very low noise and high gain LNAs up to 100G. The 0.15um power pHEMTs, well suited for LMDS, MVDS and automotive radar, achieve high power performance for up to 100GHz.
(8) TRW 0.1/0.15 um PHEMT Process:
TRW is a world leader in GaAs technology. The GaAs products have received certification for both military and commercial applications. Except the 0.35um PHEMT, we provide the top process for the millimeter wave applications. The 0.1/0.15 um PHEMT offers high ft up to 110GHz and the noise figure is less than 1dB at 30 GHz. The sub-micron gate is defined by the electron beam lithography. At the same time, the 4 mile backside process provides better thermal performance and micro
strip design possibility. The process has been used for the 20 ~ 77 GHz circuits for the applications of telescope, LMDS, etc.
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